DMTH69M9LPDW-13
ActiveDiodes Inc
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH69M9LPDW-13
ActiveDiodes Inc
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH69M9LPDW-13 |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 32 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2178 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power - Max | 2.8 W, 51.7 W |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm |
| Supplier Device Package | PowerDI5060-8 (Type UXD) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.51 | |
| 5000 | $ 0.48 | |||
| 7500 | $ 0.47 | |||
| 12500 | $ 0.45 | |||
| 17500 | $ 0.44 | |||
Description
General part information
DMTH69M9LPDW Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources