DMTH69M9LPDW Series

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Package / Case	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMTH69M9LPDW-13	49 A	PowerDI5060-8 (Type UXD)	Surface Mount	8-PowerTDFN	2.8 W 51.7 W	-55 °C	175 ░C	2 N-Channel	2 V	12.5 mOhm	60 V	2178 pF	MOSFET (Metal Oxide)	32 nC

Catalog

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production –

• Ensures More Reliable and Robust End Application

• Thermally Efficient Package - Cooler Running Applications

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

• <1.1mm Package Profile – Ideal for Thin Applications

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under separate datasheet (DMTH69M9LPDWQ)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power-management applications.