IPB60R060P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 60 MOHM;

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IPB60R060P7ATMA1

Active

Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 60 MOHM;

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R060P7ATMA1

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	2895 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	164 W
Rds On (Max) @ Id, Vgs	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPB60R060 Series

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPB60R060C7ATMA1	600 V	162 W	60 mOhm	20 V	68 nC	10 V	2850 pF	D2PAK (TO-263)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	35 A	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	Surface Mount
Infineon Technologies IPB60R060P7ATMA1	600 V	164 W	60 mOhm	20 V		10 V			D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	48 A	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	Surface Mount	2895 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.22
		10	$ 4.18
		100	$ 3.03
		500	$ 2.54
	Digi-Reel®	1	$ 6.22
		10	$ 4.18
		100	$ 3.03
		500	$ 2.54
	Tape & Reel (TR)	1000	$ 2.54

Description

General part information

IPB60R060 Series

IPB60R060P7ATMA1 is a 600V CoolMOS™ P7 power transistor. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet