IPB60R060 Series

Catalog

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 60 MOHM; PRICE/PERFORMANCE

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPB60R060C7ATMA1	600 V	162 W	60 mOhm	20 V	68 nC	10 V	2850 pF	D2PAK (TO-263)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	35 A	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	Surface Mount
Infineon Technologies IPB60R060P7ATMA1	600 V	164 W	60 mOhm	20 V		10 V			D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	48 A	MOSFET (Metal Oxide)	4 V	-55 °C	150 °C	Surface Mount	2895 pF