DMN3032LE-13
ActiveDiodes Inc
POWER FIELD-EFFECT TRANSISTOR, 5.6A I(D), 30V, 0.029OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,
Deep-Dive with AI
Search across all available documentation for this part.
DMN3032LE-13
ActiveDiodes Inc
POWER FIELD-EFFECT TRANSISTOR, 5.6A I(D), 30V, 0.029OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN3032LE-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 498 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 1.8 W |
| Rds On (Max) @ Id, Vgs | 29 mOhm |
| Supplier Device Package | SOT-223-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.56 | |
| 10 | $ 0.48 | |||
| 100 | $ 0.33 | |||
| 500 | $ 0.26 | |||
| 1000 | $ 0.21 | |||
| Digi-Reel® | 1 | $ 0.56 | ||
| 10 | $ 0.48 | |||
| 100 | $ 0.33 | |||
| 500 | $ 0.26 | |||
| 1000 | $ 0.21 | |||
| Tape & Reel (TR) | 2500 | $ 0.19 | ||
| 5000 | $ 0.18 | |||
| 12500 | $ 0.17 | |||
| 25000 | $ 0.16 | |||
Description
General part information
DMN3032LFDBQ Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources