DMN3032LFDBQ Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]
Diodes Inc DMN3032LE-13	1.8 W	4.5 V 10 V	5.6 A	20 V	MOSFET (Metal Oxide)	30 V	2 V	Surface Mount	TO-261-4 TO-261AA	N-Channel	SOT-223-3	498 pF	29 mOhm	-55 °C	150 °C
Diodes Inc DMN3032LFDB-7			6.2 A		MOSFET (Metal Oxide)	30 V	2 V	Surface Mount	6-UDFN Exposed Pad		U-DFN2020-6 (Type B)	500 pF	30 mOhm	-55 °C	150 °C	10.6 nC	2 N-Channel (Dual)	1 W
Diodes Inc DMN3032LFDBQ-7			6.2 A		MOSFET (Metal Oxide)	30 V	2 V	Surface Mount	6-UDFN Exposed Pad		U-DFN2020-6 (Type B)	500 pF	30 mOhm	-55 °C	150 °C	10.6 nC	2 N-Channel (Dual)	1 W

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust Application

• Low On-Resistance – Minimizes Power Losses

• Low Gate Charge – Minimizes Switching Losses

• Small Form Factor Low Profile Package – Increased Power Density

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.