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IPI111N15N3GAKSA1 - AUIRFSL6535 back

IPI111N15N3GAKSA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; I2PAK TO-262 PACKAGE; 11.1 MOHM;

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IPI111N15N3GAKSA1 - AUIRFSL6535 back

IPI111N15N3GAKSA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; I2PAK TO-262 PACKAGE; 11.1 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI111N15N3GAKSA1
Current - Continuous Drain (Id) @ 25°C83 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC
Input Capacitance (Ciss) (Max) @ Vds3230 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)214 W
Rds On (Max) @ Id, Vgs11.1 mOhm
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.35
10$ 3.57
100$ 2.56
500$ 2.12
1000$ 2.07

Description

General part information

IPI111 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources