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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; I2PAK TO-262 PACKAGE; 11.1 MOHM;
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id [Max] | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3230 pF | 55 nC | 11.1 mOhm | 4 V | PG-TO262-3 | Through Hole | -55 °C | 175 ░C | 20 V | 214 W | N-Channel | MOSFET (Metal Oxide) | 150 V | 83 A | 8 V 10 V | I2PAK TO-262-3 Long Leads TO-262AA |