CSD16411Q3

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 15 MOHM

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 15 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD16411Q3

Current - Continuous Drain (Id) @ 25°C	14 A, 56 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	2.7 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-12 V
Vgs(th) (Max) @ Id [Max]	2.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 15 mOhm

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]
Texas Instruments CSD16411Q3	8-VSON-CLIP (3.3x3.3)	4.5 V, 10 V	16 V	-12 V	14 A, 56 A	N-Channel	150 °C	-55 °C	2.7 W	10 mOhm	MOSFET (Metal Oxide)	2.3 V	3.8 nC	25 V	Surface Mount	8-PowerTDFN	570 pF

General part information

This 25-V, 8-mΟ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources