CSD16411Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 15 mOhm

Link to Manufacturer Page: https://www.ti.com/

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 15 mOhm

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]
Texas Instruments CSD16411Q3	8-VSON-CLIP (3.3x3.3)	4.5 V, 10 V	16 V	-12 V	14 A, 56 A	N-Channel	150 °C	-55 °C	2.7 W	10 mOhm	MOSFET (Metal Oxide)	2.3 V	3.8 nC	25 V	Surface Mount	8-PowerTDFN	570 pF

Key Features

• Ultra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing SystemsOptimized for Control FET ApplicationsAll other trademarks are the property of their respective ownersUltra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing SystemsOptimized for Control FET ApplicationsAll other trademarks are the property of their respective owners

Description

This 25-V, 8-mΟ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 25-V, 8-mΟ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.