IPB60R199CPATMA1

NRND

Infineon Technologies

MOSFET N-CH 600V 16A TO263-3

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NRND

Infineon Technologies

MOSFET N-CH 600V 16A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R199CPATMA1

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	1520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	139 W
Rds On (Max) @ Id, Vgs	199 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Qualification	Technology	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Infineon Technologies IPB60R199CPAATMA1	43 nC	Surface Mount	199 mOhm	20 V	150 °C	-40 °C	3.5 V	AEC-Q101	MOSFET (Metal Oxide)	139 W	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	Automotive	1520 pF	N-Channel	16 A
Infineon Technologies IPB60R199CPATMA1	43 nC	Surface Mount	199 mOhm	20 V	150 °C	-55 °C	3.5 V		MOSFET (Metal Oxide)	139 W	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V		1520 pF	N-Channel	16 A	PG-TO263-3-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 16A (Tc) 139W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources