IPB60R199 Series

Catalog

MOSFET N-CH 600V 16A D2PAK

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Qualification	Technology	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Infineon Technologies IPB60R199CPAATMA1	43 nC	Surface Mount	199 mOhm	20 V	150 °C	-40 °C	3.5 V	AEC-Q101	MOSFET (Metal Oxide)	139 W	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	Automotive	1520 pF	N-Channel	16 A
Infineon Technologies IPB60R199CPATMA1	43 nC	Surface Mount	199 mOhm	20 V	150 °C	-55 °C	3.5 V		MOSFET (Metal Oxide)	139 W	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V		1520 pF	N-Channel	16 A	PG-TO263-3-2