SSM6L14FE(TE85L,F)

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L14FE(TE85L,F)

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	720 mA, 800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs	1.76 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	2 nC
Input Capacitance (Ciss) (Max) @ Vds	110 pF, 90 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	150 mW
Rds On (Max) @ Id, Vgs	240 mOhm
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Configuration	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Technology	Operating Temperature	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM6L14FE(TE85L,F)	SOT-563 SOT-666	N and P-Channel	1 V	Surface Mount	ES6	MOSFET (Metal Oxide)	150 °C	150 mW	240 mOhm	300 mOhm	20 V	720 mA 800 mA	90 pF 110 pF	Logic Level Gate	1.5 V	2 nC	1.76 nC

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General part information

Mosfet Array 20V 800mA (Ta), 720mA (Ta) 150mW (Ta) Surface Mount ES6

Technical documentation and resources