MOSFET N/P-CH 20V 0.8A ES6
| Part | Package / Case | Configuration | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Technology | Operating Temperature | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | SOT-563 SOT-666 | N and P-Channel | 1 V | Surface Mount | ES6 | MOSFET (Metal Oxide) | 150 °C | 150 mW | 240 mOhm | 300 mOhm | 20 V | 720 mA 800 mA | 90 pF 110 pF | Logic Level Gate | 1.5 V | 2 nC | 1.76 nC |