
DMT69M5LCG-7
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET
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DMT69M5LCG-7
ActiveDiodes Inc
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT69M5LCG-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 52.1 A, 14.6 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1406 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 1.37 W |
| Rds On (Max) @ Id, Vgs | 8.3 mOhm |
| Supplier Device Package | V-DFN3333-8 (Type B) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 0.29 | |
| 4000 | $ 0.26 | |||
| 6000 | $ 0.25 | |||
| 10000 | $ 0.24 | |||
| 14000 | $ 0.23 | |||
Description
General part information
DMT69M5LCG Series
This new generation N-channel enhancement mode MOSFET isdesigned to minimize RDS(ON) yet maintain superior switchingperformance. This device is ideal for use in notebook battery powermanagement and load switch
Documents
Technical documentation and resources