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DMT69M5LCG-7 - Package Image for V-DFN3333-8

DMT69M5LCG-7

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT69M5LCG-7 - Package Image for V-DFN3333-8

DMT69M5LCG-7

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT69M5LCG-7
Current - Continuous Drain (Id) @ 25°C52.1 A, 14.6 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28.4 nC
Input Capacitance (Ciss) (Max) @ Vds1406 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1.37 W
Rds On (Max) @ Id, Vgs8.3 mOhm
Supplier Device PackageV-DFN3333-8 (Type B)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 0.29
4000$ 0.26
6000$ 0.25
10000$ 0.24
14000$ 0.23

Description

General part information

DMT69M5LCG Series

This new generation N-channel enhancement mode MOSFET isdesigned to minimize RDS(ON) yet maintain superior switchingperformance. This device is ideal for use in notebook battery powermanagement and load switch