DMT69M5LCG Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs
Diodes Inc DMT69M5LCG-7	N-Channel	4.5 V 10 V	2.5 V	1406 pF	14.6 A 52.1 A	20 V	28.4 nC	-55 °C	150 °C	V-DFN3333-8 (Type B)	60 V	1.37 W	MOSFET (Metal Oxide)	Surface Mount	8-PowerVDFN	8.3 mOhm

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in ProductionHigh Conversion Efficiency

• Low RDS(ON)

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact us or your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation N-channel enhancement mode MOSFET isdesigned to minimize RDS(ON) yet maintain superior switchingperformance. This device is ideal for use in notebook battery powermanagement and load switch