IPS80R1K4P7AKMA1

Unknown

Infineon Technologies

MOSFET, N-CH, 800V, 4A, TO-251

Search across all available documentation for this part.

Unknown

Infineon Technologies

MOSFET, N-CH, 800V, 4A, TO-251

Technical Specifications

Parameters and characteristics for this part

Specification	IPS80R1K4P7AKMA1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	32 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Technology	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Infineon Technologies IPS80R1K4P7AKMA1	4 A	Through Hole	N-Channel	800 V	1.4 Ohm	10 V	20 V	-55 °C	150 °C	3.5 V	MOSFET (Metal Oxide)	TO-251-3 Stub Leads IPAK	PG-TO251-3-11	10 nC	32 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1500	$ 0.45
Newark	Each	1	$ 0.70

General part information

N-Channel 800 V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3-11

Technical documentation and resources