Beta
⌘K
MOSFET, N-CH, 800V, 4A, TO-251
| Part | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id [Max] | Technology | Package / Case | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 A | Through Hole | N-Channel | 800 V | 1.4 Ohm | 10 V | 20 V | -55 °C | 150 °C | 3.5 V | MOSFET (Metal Oxide) | TO-251-3 Stub Leads IPAK | PG-TO251-3-11 | 10 nC | 32 W |