STGP7NB60KD

Obsolete

STMicroelectronics

IGBT 600V 14A 80W TO220

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DocumentsDatasheet STGx7NB60KD(FP)

STGP7NB60KD

Obsolete

STMicroelectronics

IGBT 600V 14A 80W TO220

Deep-Dive with AI

DocumentsDatasheet STGx7NB60KD(FP)

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGP7NB60KD

Current - Collector (Ic) (Max) [Max]	14 A
Current - Collector Pulsed (Icm)	56 A
Gate Charge	32.7 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Reverse Recovery Time (trr)	50 ns
Supplier Device Package	TO-220
Switching Energy	140 µJ
Td (on/off) @ 25°C	50 ns, 15 ns
Test Condition	15 V, 480 V, 7 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGP7NC60HD Series

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Part	Switching Energy	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Mounting Type	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Test Condition	Current - Collector Pulsed (Icm)	Package / Case	Reverse Recovery Time (trr)	Operating Temperature	Td (on/off) @ 25°C
STMicroelectronics STGP7NC60H	95 µJ 115 µJ	18.5 ns	72 ns	Through Hole	35 nC	-55 °C	150 °C	2.5 V	600 V	25 A	TO-220	80 W	7 A 10 Ohm 15 V 390 V	50 A	TO-220-3
STMicroelectronics STGP7NC60HD	95 µJ 115 µJ	18.5 ns	72 ns	Through Hole	35 nC	-55 °C	150 °C	2.5 V	600 V	25 A	TO-220	80 W	7 A 10 Ohm 15 V 390 V	50 A	TO-220-3	37 ns
STMicroelectronics STGP7NB60KD	140 µJ			Through Hole	32.7 nC			2.8 V	600 V	14 A	TO-220	80 W	7 A 10 Ohm 15 V 480 V	56 A	TO-220-3	50 ns	150 °C	15 ns 50 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGP7NC60HD Series

These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.