STGP7NC60HD Series

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Catalog

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Part	Switching Energy	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Mounting Type	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Test Condition	Current - Collector Pulsed (Icm)	Package / Case	Reverse Recovery Time (trr)	Operating Temperature	Td (on/off) @ 25°C
STMicroelectronics STGP7NC60H	95 µJ 115 µJ	18.5 ns	72 ns	Through Hole	35 nC	-55 °C	150 °C	2.5 V	600 V	25 A	TO-220	80 W	7 A 10 Ohm 15 V 390 V	50 A	TO-220-3
STMicroelectronics STGP7NC60HD	95 µJ 115 µJ	18.5 ns	72 ns	Through Hole	35 nC	-55 °C	150 °C	2.5 V	600 V	25 A	TO-220	80 W	7 A 10 Ohm 15 V 390 V	50 A	TO-220-3	37 ns
STMicroelectronics STGP7NB60KD	140 µJ			Through Hole	32.7 nC			2.8 V	600 V	14 A	TO-220	80 W	7 A 10 Ohm 15 V 480 V	56 A	TO-220-3	50 ns	150 °C	15 ns 50 ns

Catalog

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description

These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.