TK32E12N1,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 120 V, 0.0138 Ω@10V, TO-220, U-MOSⅧ-H
TK32E12N1,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 120 V, 0.0138 Ω@10V, TO-220, U-MOSⅧ-H
Description
General part information
TK32E12N1 Series
N-Channel 120 V 60A (Tc) 98W (Tc) Through Hole TO-220
Technical Specifications
Parameters and characteristics for this part
| Specification | TK32E12N1,S1X |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 60 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 34 nC |
| Input Capacitance (Ciss) (Max) | 2000 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 98 W |
| Rds On (Max) | 13.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TK32E12N1,S1X | Datasheet
Datasheet
Simplified CFD Model Application Note
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Avalanche energy calculation
MOSFET Secondary Breakdown
TK32E12N1 Data sheet/Japanese
Structures and Characteristics: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
MOSFET Self-Turn-On Phenomenon
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
RC Snubbers for Step-Down Converters
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Maximum Ratings: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Derating of the MOSFET Safe Operating Area
Motor Control (Vacuum Cleaners)
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
Hints and Tips for Thermal Design part3
MOSFET SPICE model grade