TK32E12N1 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 120 V, 0.0138 Ω@10V, TO-220, U-MOSⅧ-H
| Part | Vgs(th) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Package Name | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) | Mounting Type | Current - Continuous Drain (Id) (Tc) | Technology | Gate Charge (Max) | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4 V | 10 V | 150 °C | TO-220 | 120 V | 98 W | 13.8 mOhm | Through Hole | 60 A | MOSFET (Metal Oxide) | 34 nC | 20 V | N-Channel | 2000 pF | TO-220-3 |