STP11NM80

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STMicroelectronics

N-CHANNEL 800 V, 0.35 OHM TYP., 11 A MDMESH POWER MOSFET IN A TO-220 PACKAGE

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STP11NM80

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STMicroelectronics

N-CHANNEL 800 V, 0.35 OHM TYP., 11 A MDMESH POWER MOSFET IN A TO-220 PACKAGE

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DocumentsDatasheet DS3013 +14

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Technical Specifications

Parameters and characteristics for this part

Specification	STP11NM80

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	43.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1630 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STP11N60DM2 Series

N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STP11N65M5	644 pF	480 mOhm	150 °C	25 V	17 nC	MOSFET (Metal Oxide)	N-Channel	10 V	9 A	85 W	TO-220	TO-220-3	5 V	Through Hole	650 V
STMicroelectronics STP11NM80	1630 pF	400 mOhm		30 V		MOSFET (Metal Oxide)	N-Channel	10 V	11 A		TO-220	TO-220-3	5 V	Through Hole	800 V	43.6 nC	150 °C	-65 °C	150 W
STMicroelectronics STP11N60DM2	614 pF	420 mOhm		25 V		MOSFET (Metal Oxide)	N-Channel	10 V	10 A	110 W	TO-220	TO-220-3	5 V	Through Hole	600 V	16.5 nC	150 °C	-55 °C
STMicroelectronics STP11NK50Z		520 mOhm		30 V		MOSFET (Metal Oxide)	N-Channel	10 V	10 A		TO-220	TO-220-3	4.5 V	Through Hole	500 V	68 nC	150 °C	-55 °C	125 W	1390 pF
STMicroelectronics STP11N65M2	410 pF	670 mOhm		25 V		MOSFET (Metal Oxide)	N-Channel	10 V	7 A	85 W	TO-220	TO-220-3	4 V	Through Hole	650 V	12.5 nC	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.12
		50	$ 4.85
		100	$ 4.16
		500	$ 3.70
		1000	$ 3.16
		2000	$ 2.98

Description

General part information

STP11N60DM2 Series

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

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Technical documentation and resources

Datasheet

STP11NM80

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STP11NM80

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Technical Specifications

STP11N60DM2 Series

Pricing

Description

STP11N60DM2 Series

Documents

Datasheet

DS3013

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Datasheet

STP11N60DM2 Series