STP11N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

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STP11N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP11N60DM2

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.5 nC
Input Capacitance (Ciss) (Max) @ Vds	614 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STP11N60DM2 Series

N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STP11N65M5	644 pF	480 mOhm	150 °C	25 V	17 nC	MOSFET (Metal Oxide)	N-Channel	10 V	9 A	85 W	TO-220	TO-220-3	5 V	Through Hole	650 V
STMicroelectronics STP11NM80	1630 pF	400 mOhm		30 V		MOSFET (Metal Oxide)	N-Channel	10 V	11 A		TO-220	TO-220-3	5 V	Through Hole	800 V	43.6 nC	150 °C	-65 °C	150 W
STMicroelectronics STP11N60DM2	614 pF	420 mOhm		25 V		MOSFET (Metal Oxide)	N-Channel	10 V	10 A	110 W	TO-220	TO-220-3	5 V	Through Hole	600 V	16.5 nC	150 °C	-55 °C
STMicroelectronics STP11NK50Z		520 mOhm		30 V		MOSFET (Metal Oxide)	N-Channel	10 V	10 A		TO-220	TO-220-3	4.5 V	Through Hole	500 V	68 nC	150 °C	-55 °C	125 W	1390 pF
STMicroelectronics STP11N65M2	410 pF	670 mOhm		25 V		MOSFET (Metal Oxide)	N-Channel	10 V	7 A	85 W	TO-220	TO-220-3	4 V	Through Hole	650 V	12.5 nC	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.60
		50	$ 1.28
		100	$ 1.05
		500	$ 0.89
		1000	$ 0.76
		2000	$ 0.72
		5000	$ 0.69
		10000	$ 0.67

Description

General part information

STP11N60DM2 Series

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Documents

Technical documentation and resources