STP11N60DM2

LTB

STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

Find alt

Alpha

STP11N60DM2

LTB

STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

STP11 Series

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Technical Specifications

Parameters and characteristics for this part

Specification	STP11N60DM2

Current - Continuous Drain (Id) (Tc)	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	16.5 nC
Input Capacitance (Ciss) (Max)	614 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220
Power Dissipation (Max)	110 W
Rds On (Max)	420 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	5 V

STP11 Series

N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

Part	Package Name	Rds On (Max)	Package / Case	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	Power Dissipation (Max)	Operating Temperature (Max)	Operating Temperature (Min)
STMicroelectronics STP11N65M5	TO-220	480 mOhm	TO-220-3	5 V	9 A	MOSFET (Metal Oxide)	N-Channel	10 V	17 nC	25 V	644 pF	Through Hole	650 V	150 °C	85 W
STMicroelectronics STP11NM80	TO-220	400 mOhm	TO-220-3	5 V	11 A	MOSFET (Metal Oxide)	N-Channel	10 V	43.6 nC	30 V	1630 pF	Through Hole	800 V		150 W	150 °C	-65 °C
STMicroelectronics STP11N60DM2	TO-220	420 mOhm	TO-220-3	5 V	10 A	MOSFET (Metal Oxide)	N-Channel	10 V	16.5 nC	25 V	614 pF	Through Hole	600 V		110 W	150 °C	-55 °C
STMicroelectronics STP11NK50Z	TO-220	520 mOhm	TO-220-3	4.5 V	10 A	MOSFET (Metal Oxide)	N-Channel	10 V	68 nC	30 V	1390 pF	Through Hole	500 V		125 W	150 °C	-55 °C
STMicroelectronics STP11N65M2	TO-220	670 mOhm	TO-220-3	4 V	7 A	MOSFET (Metal Oxide)	N-Channel	10 V	12.5 nC	25 V	410 pF	Through Hole	650 V		85 W	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

STP11N60DM2 | Datasheet