DMN3018SFGQ-13

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3018SFGQ-13

Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.2 nC
Input Capacitance (Ciss) (Max) @ Vds	697 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.1 V

Dual N-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Diodes Inc DMN3018SSD-13	30 V	Logic Level Gate	-55 °C	150 °C	2.1 V	2 N-Channel (Dual)	Surface Mount	6.7 A	697 pF	8-SOIC	3.9 mm	0.154 in	8-SO	1.5 W	13.2 nC	MOSFET (Metal Oxide)
Diodes Inc DMN3018SFGQ-13	30 V		-55 °C	150 °C	2.1 V		Surface Mount	8.5 A	697 pF	8-PowerVDFN			POWERDI3333-8		13.2 nC	MOSFET (Metal Oxide)	25 V	N-Channel	4.5 V 10 V	1 W	21 mOhm
Diodes Inc DMN3018SFGQ-7	30 V		-55 °C	150 °C	2.1 V		Surface Mount	8.5 A	697 pF	8-PowerVDFN			POWERDI3333-8		13.2 nC	MOSFET (Metal Oxide)	25 V	N-Channel	4.5 V 10 V	1 W	21 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101 and supported by a PPAP.

Technical documentation and resources