Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Configuration | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 30 V | Logic Level Gate | -55 °C | 150 °C | 2.1 V | 2 N-Channel (Dual) | Surface Mount | 6.7 A | 697 pF | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 1.5 W | 13.2 nC | MOSFET (Metal Oxide) | |||||
Diodes Inc | 30 V | -55 °C | 150 °C | 2.1 V | Surface Mount | 8.5 A | 697 pF | 8-PowerVDFN | POWERDI3333-8 | 13.2 nC | MOSFET (Metal Oxide) | 25 V | N-Channel | 4.5 V 10 V | 1 W | 21 mOhm | |||||
Diodes Inc | 30 V | -55 °C | 150 °C | 2.1 V | Surface Mount | 8.5 A | 697 pF | 8-PowerVDFN | POWERDI3333-8 | 13.2 nC | MOSFET (Metal Oxide) | 25 V | N-Channel | 4.5 V 10 V | 1 W | 21 mOhm |