Technical Specifications
Parameters and characteristics for this part
| Specification | STD6N60DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 274 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD6N60DM2 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources
Datasheet
DatasheetAN2344
Application Notes (5 of 7)Flyers (5 of 8)
AN5427
Application Notes (5 of 7)UM1575
User ManualsFlyers (5 of 8)
AN4337
Application Notes (5 of 7)AN2626
Application Notes (5 of 7)TN1378
Technical Notes & ArticlesFlyers (5 of 8)
Flyers (5 of 8)
AN4250
Application Notes (5 of 7)AN2842
Application Notes (5 of 7)TN1225
Technical Notes & ArticlesTN1224
Technical Notes & ArticlesDS12202
Product SpecificationsTN1156
Technical Notes & ArticlesFlyers (5 of 8)
Flyers (5 of 8)
Flyers (5 of 8)
AN4720
Application Notes (5 of 7)Flyers (5 of 8)
