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STD6N60M2 - ROHM RBR10NS40AFHTL

STD6N60M2

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STMicroelectronics

N-CHANNEL 600 V, 1.06 OHM TYP., 4.5 A MDMESH M2 POWER MOSFET IN DPAK PACKAGE

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STD6N60M2 - ROHM RBR10NS40AFHTL

STD6N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 1.06 OHM TYP., 4.5 A MDMESH M2 POWER MOSFET IN DPAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD6N60M2
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC
Input Capacitance (Ciss) (Max) @ Vds232 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs [Max]1.2 Ohm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.98
10$ 1.26
100$ 0.88
500$ 0.72
1000$ 0.63
Digi-Reel® 1$ 1.98
10$ 1.26
100$ 0.88
500$ 0.72
1000$ 0.63
Tape & Reel (TR) 2500$ 0.56
5000$ 0.52
7500$ 0.52
NewarkEach (Supplied on Cut Tape) 1$ 2.29
10$ 1.57
25$ 1.45
50$ 1.32
100$ 1.19
250$ 1.11
500$ 1.03
1000$ 0.93

Description

General part information

STD6N60DM2 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.