TSM210N02CX RFG

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Taiwan Semiconductor Corporation

20V 6.7A 1.56W 800MV 1 N-CHANNEL SOT-23 MOSFETS ROHS

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Taiwan Semiconductor Corporation

20V 6.7A 1.56W 800MV 1 N-CHANNEL SOT-23 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	TSM210N02CX RFG

Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1.56 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	800 mV

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature	Package / Case	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Taiwan Semiconductor Corporation TSM210N02CX	800 mV	SOT-23	1.56 W	150 °C	SC-59 SOT-23-3 TO-236-3	Surface Mount	MOSFET (Metal Oxide)	20 V	1.8 V 4.5 V	10 V	5.8 nC	600 pF	N-Channel	21 mOhm	6.7 A
Taiwan Semiconductor Corporation TSM210N02CX RFG	800 mV	SOT-23	1.56 W	150 °C	SC-59 SOT-23-3 TO-236-3	Surface Mount	MOSFET (Metal Oxide)	20 V	1.8 V 4.5 V	10 V		600 pF	N-Channel		6.7 A	4 nC	25 mOhm

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General part information

N-Channel 20 V 6.7A (Tc) 1.56W (Tc) Surface Mount SOT-23

Technical documentation and resources