20V, 6.7A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) [Max] | Operating Temperature | Package / Case | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 800 mV | SOT-23 | 1.56 W | 150 °C | SC-59 SOT-23-3 TO-236-3 | Surface Mount | MOSFET (Metal Oxide) | 20 V | 1.8 V 4.5 V | 10 V | 5.8 nC | 600 pF | N-Channel | 21 mOhm | 6.7 A | ||
Taiwan Semiconductor Corporation | 800 mV | SOT-23 | 1.56 W | 150 °C | SC-59 SOT-23-3 TO-236-3 | Surface Mount | MOSFET (Metal Oxide) | 20 V | 1.8 V 4.5 V | 10 V | 600 pF | N-Channel | 6.7 A | 4 nC | 25 mOhm |