EPC2100ENGRT

Obsolete

Efficient Power Conversion Corporation

GANFET 2 N-CH 30V 9.5A/38A DIE

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EPC2100ENGRT

Obsolete

Efficient Power Conversion Corporation

GANFET 2 N-CH 30V 9.5A/38A DIE

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2100ENGRT

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	40 A, 10 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	19 nC
Gate Charge (Qg) (Max) @ Vgs	4.9 nC
Input Capacitance (Ciss) (Max) @ Vds	475 pF, 1960 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Die
Rds On (Max) @ Id, Vgs	8.2 mOhm, 2.1 mOhm
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id	2.5 V, 2.5 V

EPC210 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Configuration	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Efficient Power Conversion Corporation EPC2105	150 °C	-40 °C	38 A	9.5 A	3.4 mOhm 14.5 mOhm	300 pF 1100 pF	2.5 V 2.5 V	Surface Mount	Die	80 V	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	Die	2.5 nC	10 nC
Efficient Power Conversion Corporation EPC2102ENGRT	150 °C	-40 °C			4.4 mOhm	830 pF	2.5 V	Surface Mount	Die	60 V	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	Die			23 A	6.8 nC
Efficient Power Conversion Corporation EPC2106ENGRT	150 °C	-40 °C			70 mOhm	75 pF	2.5 V	Surface Mount	Die	100 V	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	Die	0.73 nC		1.7 A
Efficient Power Conversion Corporation EPC2104	150 °C	-40 °C			6.3 mOhm	800 pF	2.5 V	Surface Mount	Die	100 V	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	Die	7 nC		23 A
Efficient Power Conversion Corporation EPC2103ENGRT					5.5 mOhm	7600 pF	2.5 V	Surface Mount	Die	80 V	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	Die	6.5 nC		23 A
Efficient Power Conversion Corporation EPC2107	150 °C	-40 °C			3.3 Ohm 320 mOhm	7 pF 16 pF	2.5 V 2.5 V	Surface Mount	9-BGA (1.35x1.35)	100 V	3 N-Channel (Half Bridge + Synchronous Bootstrap)	GaNFET (Gallium Nitride)	9-VFBGA	0.16 nC	0.044 nC	1.7 A 500 mA
Efficient Power Conversion Corporation EPC2105ENGRT	150 °C	-40 °C			14.5 mOhm	300 pF	2.5 V	Surface Mount	Die	80 V	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	Die			9.5 A	2.5 nC
Efficient Power Conversion Corporation EPC2103	150 °C	-40 °C			5.5 mOhm	760 pF	2.5 V	Surface Mount	Die	80 V	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	Die	6.5 nC		28 A
Efficient Power Conversion Corporation EPC2100ENGRT	150 °C	-40 °C			2.1 mOhm 8.2 mOhm	475 pF 1960 pF	2.5 V 2.5 V	Surface Mount	Die	30 V	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	Die	4.9 nC	19 nC	10 A 40 A
Efficient Power Conversion Corporation EPC2104ENGRT	150 °C	-40 °C			6.3 mOhm	800 pF	2.5 V	Surface Mount	Die	100 V	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	Die	7 nC		23 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

EPC210 Series

Mosfet Array 30V 10A (Ta), 40A (Ta) Surface Mount Die

Documents

Technical documentation and resources