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GANFET 2N-CH 80V 9.5A/38A DIE

PartOperating Temperature [Max]Operating Temperature [Min]Current - Continuous Drain (Id) @ 25°C [Max]Current - Continuous Drain (Id) @ 25°C [Min]Rds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ VdsVgs(th) (Max) @ IdMounting TypeSupplier Device PackageDrain to Source Voltage (Vdss)ConfigurationTechnologyPackage / CaseGate Charge (Qg) (Max) @ VgsGate Charge (Qg) (Max) @ VgsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ Vgs [Max]
Efficient Power Conversion Corporation
EPC2105
150 °C
-40 °C
38 A
9.5 A
3.4 mOhm
14.5 mOhm
300 pF
1100 pF
2.5 V
2.5 V
Surface Mount
Die
80 V
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
Die
2.5 nC
10 nC
Efficient Power Conversion Corporation
EPC2102ENGRT
150 °C
-40 °C
4.4 mOhm
830 pF
2.5 V
Surface Mount
Die
60 V
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
Die
23 A
6.8 nC
Efficient Power Conversion Corporation
EPC2106ENGRT
150 °C
-40 °C
70 mOhm
75 pF
2.5 V
Surface Mount
Die
100 V
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
Die
0.73 nC
1.7 A
Efficient Power Conversion Corporation
EPC2104
150 °C
-40 °C
6.3 mOhm
800 pF
2.5 V
Surface Mount
Die
100 V
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
Die
7 nC
23 A
Efficient Power Conversion Corporation
EPC2103ENGRT
5.5 mOhm
7600 pF
2.5 V
Surface Mount
Die
80 V
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
Die
6.5 nC
23 A
Efficient Power Conversion Corporation
EPC2107
150 °C
-40 °C
3.3 Ohm
320 mOhm
7 pF
16 pF
2.5 V
2.5 V
Surface Mount
9-BGA (1.35x1.35)
100 V
3 N-Channel (Half Bridge + Synchronous Bootstrap)
GaNFET (Gallium Nitride)
9-VFBGA
0.16 nC
0.044 nC
1.7 A
500 mA
Efficient Power Conversion Corporation
EPC2105ENGRT
150 °C
-40 °C
14.5 mOhm
300 pF
2.5 V
Surface Mount
Die
80 V
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
Die
9.5 A
2.5 nC
Efficient Power Conversion Corporation
EPC2103
150 °C
-40 °C
5.5 mOhm
760 pF
2.5 V
Surface Mount
Die
80 V
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
Die
6.5 nC
28 A
Efficient Power Conversion Corporation
EPC2100ENGRT
150 °C
-40 °C
2.1 mOhm
8.2 mOhm
475 pF
1960 pF
2.5 V
2.5 V
Surface Mount
Die
30 V
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
Die
4.9 nC
19 nC
10 A
40 A
Efficient Power Conversion Corporation
EPC2104ENGRT
150 °C
-40 °C
6.3 mOhm
800 pF
2.5 V
Surface Mount
Die
100 V
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
Die
7 nC
23 A