IRF9383MTRPBF
ActiveInfineon Technologies
IR MOSFET™ P-CHANNEL MOSFET ; DIRECTFET™ M PACKAGE; 2.9 MOHM;
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IRF9383MTRPBF
ActiveInfineon Technologies
IR MOSFET™ P-CHANNEL MOSFET ; DIRECTFET™ M PACKAGE; 2.9 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF9383MTRPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 160 A, 22 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 130 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7305 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | DirectFET™ Isometric MX |
| Power Dissipation (Max) | 113 W, 2.1 W |
| Rds On (Max) @ Id, Vgs | 2.9 mOhm |
| Supplier Device Package | DIRECTFET™ MX |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.90 | |
| 1 | $ 2.90 | |||
| 10 | $ 2.41 | |||
| 10 | $ 2.41 | |||
| 100 | $ 1.92 | |||
| 100 | $ 1.92 | |||
| 500 | $ 1.62 | |||
| 500 | $ 1.62 | |||
| 1000 | $ 1.38 | |||
| 1000 | $ 1.38 | |||
| 2000 | $ 1.31 | |||
| 2000 | $ 1.31 | |||
| Digi-Reel® | 1 | $ 2.90 | ||
| 1 | $ 2.90 | |||
| 10 | $ 2.41 | |||
| 10 | $ 2.41 | |||
| 100 | $ 1.92 | |||
| 100 | $ 1.92 | |||
| 500 | $ 1.62 | |||
| 500 | $ 1.62 | |||
| 1000 | $ 1.38 | |||
| 1000 | $ 1.38 | |||
| 2000 | $ 1.31 | |||
| 2000 | $ 1.31 | |||
| Tape & Reel (TR) | 4800 | $ 1.26 | ||
| 4800 | $ 1.26 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.17 | |
| 10 | $ 2.24 | |||
| 25 | $ 2.05 | |||
| 50 | $ 1.87 | |||
| 100 | $ 1.68 | |||
| 250 | $ 1.63 | |||
| 500 | $ 1.42 | |||
| 1000 | $ 1.27 | |||
Description
General part information
IRF9383 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Documents
Technical documentation and resources