IRF9383 Series

Catalog

IR MOSFET™ P-CHANNEL MOSFET ; DIRECTFET™ M PACKAGE; 2.9 MOHM;

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF9383MTRPBF	4.5 V 10 V	130 nC	P-Channel	2.1 W 113 W	2.4 V	7305 pF	20 V	DIRECTFET™ MX	22 A 160 A	DirectFET™ Isometric MX	MOSFET (Metal Oxide)	150 °C	-40 °C	Surface Mount	30 V	2.9 mOhm
Infineon Technologies IRF9383MTRPBF	4.5 V 10 V	130 nC	P-Channel	2.1 W 113 W	2.4 V	7305 pF	20 V	DIRECTFET™ MX	22 A 160 A	DirectFET™ Isometric MX	MOSFET (Metal Oxide)	150 °C	-40 °C	Surface Mount	30 V	2.9 mOhm