STP50NF25

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STMicroelectronics

N-CHANNEL 250 V, 55 MOHM TYP, 45 A STRIPFET POWER MOSFET IN A TO-220 PACKAGE

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DocumentsTN1378 AN2842 +16

STP50NF25

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STMicroelectronics

N-CHANNEL 250 V, 55 MOHM TYP, 45 A STRIPFET POWER MOSFET IN A TO-220 PACKAGE

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DocumentsTN1378 AN2842 +16

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP50NF25

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68.2 nC
Input Capacitance (Ciss) (Max) @ Vds	2670 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	69 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STP50N60DM6 Series

N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in a TO-220 package

Part	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
STMicroelectronics STP50NF25	TO-220-3	MOSFET (Metal Oxide)	69 mOhm	250 V	4 V	TO-220	68.2 nC	-55 °C	150 °C	N-Channel	Through Hole	2670 pF	20 V	45 A	10 V
STMicroelectronics STP50N60DM6	TO-220-3	MOSFET (Metal Oxide)	80 mOhm	600 V	4.75 V	TO-220		-55 °C	150 °C	N-Channel	Through Hole	2350 pF	25 V	36 A	10 V	55 nC	250 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.00
		10	$ 1.96
		100	$ 1.37
		500	$ 1.13

Description

General part information

STP50N60DM6 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources

STP50NF25

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STP50NF25

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Technical Specifications

STP50N60DM6 Series

Pricing

Description

STP50N60DM6 Series

Documents

TN1378

AN2842

DS5174

AN4250

AN2344

TN1224

UM1575

AN4337

TN1225

TN1156

Datasheet

STP50N60DM6 Series