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STP50N60DM6 - TO-220-3 Type A

STP50N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 70 MOHM TYP., 36 A MDMESH DM6 POWER MOSFET IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetTechnical Data Sheet EN+24
STP50N60DM6 - TO-220-3 Type A

STP50N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 70 MOHM TYP., 36 A MDMESH DM6 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheetTechnical Data Sheet EN+24

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP50N60DM6
Current - Continuous Drain (Id) @ 25°C36 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC
Input Capacitance (Ciss) (Max) @ Vds2350 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs80 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.60
50$ 3.52
100$ 3.22
500$ 2.71
1000$ 2.66
NewarkEach 1$ 7.04
10$ 5.82
25$ 5.34
50$ 5.10
100$ 4.85
250$ 4.56
500$ 4.40

Description

General part information

STP50N60DM6 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.