TSM150NB04LDCR RLG

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 8A/37A 8DFN

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 8A/37A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM150NB04LDCR RLG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	37 A, 8 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	966 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	40 W, 2 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max	Configuration	Rds On (Max) @ Id, Vgs
Taiwan Semiconductor Corporation TSM150NB04CR RLG	19 nC	8-PDFN	5.75	5.2	1092 pF	3.1 W 56 W	Surface Mount	-55 °C	175 ░C	40 V	8-PowerLDFN	10 V	4 V	N-Channel	20 V	MOSFET (Metal Oxide)	10 A 41 A	15 mOhm
Taiwan Semiconductor Corporation TSM150NB04LCR RLG		8-PDFN	5.75	5.2	966 pF	3.1 W 56 W	Surface Mount	-55 °C	175 ░C	40 V	8-PowerLDFN	4.5 V 10 V	2.5 V	N-Channel	20 V	MOSFET (Metal Oxide)	10 A 41 A	15 mOhm	18 nC
Taiwan Semiconductor Corporation TSM150NB04DCR RLG		8-PDFN (5x6)			1132 pF		Surface Mount	-55 °C	150 °C	40 V	8-PowerTDFN		4 V			MOSFET (Metal Oxide)	8 A 38 A		18 nC	2 W 40 W	2 N-Channel (Dual)	15 mOhm
Taiwan Semiconductor Corporation TSM150NB04LDCR RLG		8-PDFN (5x6)			966 pF		Surface Mount	-55 °C	150 °C	40 V	8-PowerTDFN		2.5 V			MOSFET (Metal Oxide)	8 A 37 A		18 nC	2 W 40 W	2 N-Channel (Dual)	15 mOhm
Taiwan Semiconductor Corporation TSM150P03PQ33 RGG		8-PDFN (3.1x3.1)			1829 pF	27.8 W	Surface Mount	-55 °C	150 °C	30 V	8-PowerWDFN	4.5 V 10 V	2.5 V	P-Channel	20 V	MOSFET (Metal Oxide)	36 A	15 mOhm	29.3 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 8A (Ta), 37A (Tc) 2W (Ta), 40W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources