TSM150 Series

Catalog

MOSFET N-CH 40V 10A/41A 8PDFN

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max	Configuration	Rds On (Max) @ Id, Vgs
Taiwan Semiconductor Corporation TSM150NB04CR RLG	19 nC	8-PDFN	5.75	5.2	1092 pF	3.1 W 56 W	Surface Mount	-55 °C	175 ░C	40 V	8-PowerLDFN	10 V	4 V	N-Channel	20 V	MOSFET (Metal Oxide)	10 A 41 A	15 mOhm
Taiwan Semiconductor Corporation TSM150NB04LCR RLG		8-PDFN	5.75	5.2	966 pF	3.1 W 56 W	Surface Mount	-55 °C	175 ░C	40 V	8-PowerLDFN	4.5 V 10 V	2.5 V	N-Channel	20 V	MOSFET (Metal Oxide)	10 A 41 A	15 mOhm	18 nC
Taiwan Semiconductor Corporation TSM150NB04DCR RLG		8-PDFN (5x6)			1132 pF		Surface Mount	-55 °C	150 °C	40 V	8-PowerTDFN		4 V			MOSFET (Metal Oxide)	8 A 38 A		18 nC	2 W 40 W	2 N-Channel (Dual)	15 mOhm
Taiwan Semiconductor Corporation TSM150NB04LDCR RLG		8-PDFN (5x6)			966 pF		Surface Mount	-55 °C	150 °C	40 V	8-PowerTDFN		2.5 V			MOSFET (Metal Oxide)	8 A 37 A		18 nC	2 W 40 W	2 N-Channel (Dual)	15 mOhm
Taiwan Semiconductor Corporation TSM150P03PQ33 RGG		8-PDFN (3.1x3.1)			1829 pF	27.8 W	Surface Mount	-55 °C	150 °C	30 V	8-PowerWDFN	4.5 V 10 V	2.5 V	P-Channel	20 V	MOSFET (Metal Oxide)	36 A	15 mOhm	29.3 nC