BSZ011NE2LS5IATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 1.1 MOHM; SCHOTTKY
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BSZ011NE2LS5IATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 1.1 MOHM; SCHOTTKY
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ011NE2LS5IATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40 A, 35 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 50 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 69 W, 2.1 W |
| Rds On (Max) @ Id, Vgs | 1.1 mOhm |
| Supplier Device Package | PG-TSDSON-8-34 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.61 | |
| 10 | $ 2.36 | |||
| 25 | $ 2.11 | |||
| 100 | $ 1.90 | |||
| 250 | $ 1.69 | |||
| 500 | $ 1.48 | |||
| 1000 | $ 1.22 | |||
| Digi-Reel® | 1 | $ 2.61 | ||
| 10 | $ 2.36 | |||
| 25 | $ 2.11 | |||
| 100 | $ 1.90 | |||
| 250 | $ 1.69 | |||
| 500 | $ 1.48 | |||
| 1000 | $ 1.22 | |||
| Tape & Reel (TR) | 5000 | $ 1.10 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.07 | |
| 10 | $ 1.37 | |||
| 25 | $ 1.34 | |||
| 50 | $ 1.30 | |||
| 100 | $ 1.27 | |||
| 250 | $ 1.21 | |||
| 500 | $ 1.16 | |||
| 1000 | $ 1.13 | |||
Description
General part information
BSZ011 Series
With the BSZ011NELS5I OptiMOS™ 5 power MOSFET, an additional device with integrated Schottky-like diode in high performance PQFN 3.3x3.3mm package is complementing Infineon’s high performance portfolio. It allows a further increase in system efficiency enabled by a significantly reduced RDS(on)in applications such as synchronous rectification in server and telecom SMPS. The outstanding electrical performance combined with a small PQFN 3.3x3.3mm package further enhances best-in-class power density and form factor improvement in the target applications.
Documents
Technical documentation and resources