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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 1.1 MOHM; SCHOTTKY
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1.1 mOhm | 2.1 W 69 W | Surface Mount | PG-TSDSON-8-34 | -55 °C | 150 °C | 50 nC | 25 V | 8-PowerVDFN | 3400 pF | 16 V | 4.5 V 10 V | 35 A 40 A | N-Channel | 2 V | MOSFET (Metal Oxide) |