TK100E10N1,S1X

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 100A TO220

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 100A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TK100E10N1,S1X

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	8800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	255 W
Rds On (Max) @ Id, Vgs [Max]	3.4 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage TK100E10N1,S1X	TO-220	3.4 mOhm	10 V	TO-220-3	150 °C	Through Hole	MOSFET (Metal Oxide)	8800 pF	N-Channel	255 W	20 V	100 A	100 V	140 nC

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General part information

N-Channel 100 V 100A (Ta) 255W (Tc) Through Hole TO-220

Technical documentation and resources