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MOSFET N-CH 100V 100A TO220
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Operating Temperature | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Power Dissipation (Max) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220 | 3.4 mOhm | 10 V | TO-220-3 | 150 °C | Through Hole | MOSFET (Metal Oxide) | 8800 pF | N-Channel | 255 W | 20 V | 100 A | 100 V | 140 nC |