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STP8NM50N - TO-220-3

STP8NM50N

Active
STMicroelectronics

N-CHANNEL 500 V, 0.73 OHM, 5 A MDMESH(TM) II POWER MOSFET IN TO-220

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Search across all available documentation for this part.

DocumentsDatasheetTN1225+17
STP8NM50N - TO-220-3

STP8NM50N

Active
STMicroelectronics

N-CHANNEL 500 V, 0.73 OHM, 5 A MDMESH(TM) II POWER MOSFET IN TO-220

Deep-Dive with AI

DocumentsDatasheetTN1225+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP8NM50N
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC
Input Capacitance (Ciss) (Max) @ Vds364 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs790 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.27
50$ 1.82
100$ 1.50
500$ 1.27
1000$ 1.08
2000$ 1.02
5000$ 0.99
10000$ 0.95

Description

General part information

STP8NM50N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.