STP8NM50N Series

N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in TO-220

Catalog

N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in TO-220

Part	Package / Case	Supplier Device Package	Operating Temperature	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)
STMicroelectronics STP8NM50N	TO-220-3	TO-220	150 °C	500 V	MOSFET (Metal Oxide)	10 V	364 pF	14 nC	N-Channel	4 V	Through Hole	5 A	790 mOhm	25 V	45 W

Catalog

N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in TO-220

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.