STGB6NC60HD-1

Obsolete

STMicroelectronics

IGBT 600V 15A 56W I2PAK

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STGB6NC60HD-1

Obsolete

STMicroelectronics

IGBT 600V 15A 56W I2PAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGB6NC60HD-1

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Pulsed (Icm)	21 A
Gate Charge	13.6 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power - Max [Max]	56 W
Reverse Recovery Time (trr)	21 ns
Supplier Device Package	I2PAK
Td (on/off) @ 25°C	12 ns
Td (on/off) @ 25°C	76 ns
Test Condition	3 A, 390 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGB6M65DF2 Series

Trench gate field-stop IGBT M series, 650 V 6 A low loss

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Mounting Type	Current - Collector (Ic) (Max) [Max]	Test Condition	Supplier Device Package	Package / Case	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Reverse Recovery Time (trr)	Switching Energy
STMicroelectronics STGB6NC60HT4	600 V	13.6 nC	Surface Mount	15 A	3 A 10 Ohm 15 V 390 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	12 ns	76 ns	2.5 V	56 W	21 A	-55 °C	150 °C
STMicroelectronics STGB6M65DF2		21.2 nC	Surface Mount	12 A	6 A 15 V 22 Ohm 400 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15 ns 90 ns		2 V	88 W		-55 °C	175 ░C	650 V	Trench Field Stop	140 ns	36 µJ 200 µJ
STMicroelectronics STGB6NC60HD-1	600 V	13.6 nC	Through Hole	15 A	3 A 10 Ohm 15 V 390 V	I2PAK	I2PAK TO-262-3 Long Leads TO-262AA	12 ns	76 ns	2.5 V	56 W	21 A	-55 °C	150 °C			21 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGB6M65DF2 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources