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STGB6M65DF2 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STGB6M65DF2

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 6 A LOW LOSS

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STGB6M65DF2 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STGB6M65DF2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 6 A LOW LOSS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGB6M65DF2
Current - Collector (Ic) (Max) [Max]12 A
Gate Charge21.2 nC
IGBT TypeTrench Field Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]88 W
Reverse Recovery Time (trr)140 ns
Supplier Device PackageD2PAK
Switching Energy36 µJ, 200 µJ
Td (on/off) @ 25°C15 ns, 90 ns
Test Condition22 Ohm, 6 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.93
10$ 1.23
100$ 0.83
500$ 0.66
1000$ 0.60
Digi-Reel® 1$ 1.93
10$ 1.23
100$ 0.83
500$ 0.66
1000$ 0.60
Tape & Reel (TR) 2000$ 0.56
4000$ 0.52
6000$ 0.50
10000$ 0.50

Description

General part information

STGB6M65DF2 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.