IKZA50N65RH5XKSA1

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Infineon Technologies

IGBT, 80 A, 1.65 V, 305 W, 650 V, TO-247, 4 PINS

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IKZA50N65RH5XKSA1

Active

Infineon Technologies

IGBT, 80 A, 1.65 V, 305 W, 650 V, TO-247, 4 PINS

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IKZA50N65RH5XKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	120 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-4
Power - Max [Max]	305 W
Supplier Device Package	PG-TO247-4-3
Switching Energy	200 µJ, 180 µJ
Test Condition	12 Ohm, 400 V, 15 V, 25 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

IKZA50 Series

Part	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	IGBT Type	Power - Max [Max]	Gate Charge	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Switching Energy	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C
Infineon Technologies IKZA50N65SS5XKSA1	9 Ohm 15 V 50 A 400 V	-40 C	175 °C	Through Hole	PG-TO247-4-3	Trench Field Stop	274 W	110 nC	TO-247-4	650 V	200 A	80 A	230 µJ 520 µJ	1.7 V	19 ns 140 ns
Infineon Technologies IKZA50N65RH5XKSA1	12 Ohm 15 V 25 A 400 V	-40 C	175 °C	Through Hole	PG-TO247-4-3	Trench Field Stop	305 W	120 nC	TO-247-4	650 V	200 A	80 A	180 µJ 200 µJ	2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.35
		30	$ 4.29
		120	$ 3.76
Newark	Each	1	$ 9.54
		10	$ 8.88
		25	$ 7.02
		50	$ 6.63
		100	$ 6.23
		480	$ 6.22
		720	$ 5.73

Description

General part information

IKZA50 Series

650 V, 50 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package. The ultra-fast 650 V hard-switchingTRENCHSTOP™ 5 H5IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fastTRENCHSTOP™ 5 H5IGBT with half-ratedfreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discreteenables unprecedented reduction of total switching losses and allows to increase significantly switching frequency. The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.