IKZA50N65SS5XKSA1

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Infineon Technologies

THE IKZA50N65SS5 IS A 650 V, 50 A TRENCHSTOP™ 5 S5 HYBRID COOLSIC™ IGBT DISCRETE

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DocumentsTechnical Data Sheet EN

IKZA50N65SS5XKSA1

Active

Infineon Technologies

THE IKZA50N65SS5 IS A 650 V, 50 A TRENCHSTOP™ 5 S5 HYBRID COOLSIC™ IGBT DISCRETE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IKZA50N65SS5XKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	110 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-4
Power - Max [Max]	274 W
Supplier Device Package	PG-TO247-4-3
Switching Energy	520 µJ, 230 µJ
Td (on/off) @ 25°C	140 ns, 19 ns
Test Condition	9 Ohm, 400 V, 15 V, 50 A
Vce(on) (Max) @ Vge, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max)	650 V

IKZA50 Series

Part	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	IGBT Type	Power - Max [Max]	Gate Charge	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Switching Energy	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C
Infineon Technologies IKZA50N65SS5XKSA1	9 Ohm 15 V 50 A 400 V	-40 C	175 °C	Through Hole	PG-TO247-4-3	Trench Field Stop	274 W	110 nC	TO-247-4	650 V	200 A	80 A	230 µJ 520 µJ	1.7 V	19 ns 140 ns
Infineon Technologies IKZA50N65RH5XKSA1	12 Ohm 15 V 25 A 400 V	-40 C	175 °C	Through Hole	PG-TO247-4-3	Trench Field Stop	305 W	120 nC	TO-247-4	650 V	200 A	80 A	180 µJ 200 µJ	2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.87
		30	$ 6.19
Newark	Each	1	$ 11.67
		10	$ 11.65
		25	$ 9.43
		50	$ 9.19
		100	$ 8.94
		480	$ 8.90

Description

General part information

IKZA50 Series

650 V, 50A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package The 650 V hard-switchingTRENCHSTOP™ 5 S5IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. Combination of theTRENCHSTOP™ 5 S5IGBT technology with thefreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discretefurther reduces switching losses at almost unchanged dv/dt and di/dt values. The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet