
STGB20NB41LZT4
ActiveIGBT SINGLE TRANSISTOR, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 ROHS COMPLIANT: YES
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STGB20NB41LZT4
ActiveIGBT SINGLE TRANSISTOR, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGB20NB41LZT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 46 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power - Max [Max] | 200 W |
| Supplier Device Package | D2PAK |
| Switching Energy | 5 mJ, 12.9 mJ |
| Td (on/off) @ 25°C | 12.1 µs |
| Td (on/off) @ 25°C | 1 µs |
| Test Condition | 320 V, 1000 Ohm, 5 V, 20 A |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 442 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB20N45LZAG Series
This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
Documents
Technical documentation and resources