STGB20NC60VT4

Obsolete

STMicroelectronics

IGBT 600V 60A 200W D2PAK

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STGB20NC60VT4

Obsolete

STMicroelectronics

IGBT 600V 60A 200W D2PAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGB20NC60VT4

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	100 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	200 W
Supplier Device Package	TO-263 (D2PAK)
Switching Energy	220 µJ, 330 µJ
Td (on/off) @ 25°C	31 ns, 100 ns
Test Condition	390 V, 3.3 Ohm, 15 V, 20 A
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGB20N45LZAG Series

Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ

Part	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Mounting Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Grade	Current - Collector Pulsed (Icm)	Test Condition	Qualification	Gate Charge	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	IGBT Type	Switching Energy [custom]	Switching Energy [custom]
STMicroelectronics STGB20N45LZAG	150 W	-55 °C	175 ░C	Logic	Surface Mount	4.6 µs	1.1 µs	25 A	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.25 V	450 V	Automotive	50 A	5 V 10 A 300 V 1000 Ohm	AEC-Q101	26 nC
STMicroelectronics STGB20NB37LZ	200 W	-55 °C	175 ░C		Surface Mount	2 µs	2.3 µs	40 A	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	425 V		80 A	4.5 V 20 A 250 V 1000 Ohm		51 nC	11.8 mJ
STMicroelectronics STGB20NC60VT4	200 W	-55 °C	150 °C		Surface Mount		31 ns 100 ns	60 A	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.5 V			100 A	3.3 Ohm 15 V 20 A 390 V		100 nC	220 µJ 330 µJ	600 V
STMicroelectronics STGB20NB41LZT4	200 W	-55 °C	175 ░C		Surface Mount	12.1 µs	1 µs	40 A	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	442 V		80 A	5 V 20 A 320 V 1000 Ohm		46 nC	5 mJ 12.9 mJ
STMicroelectronics STGB20H60DF	167 W	-55 °C	175 ░C		Surface Mount	177 ns	42.5 ns	40 A	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V			80 A	10 Ohm 15 V 20 A 400 V		115 nC		600 V	90 ns	Trench Field Stop	209 µJ	261 µJ

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGB20N45LZAG Series

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.

Documents

Technical documentation and resources